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CSD16409Q3 Datasheet(PDF) 4 Page - Texas Instruments

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No. de pieza CSD16409Q3
Descripción Electrónicos  N-Channel NexFET??Power MOSFETs
Download  11 Pages
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD16409Q3 Datasheet(HTML) 4 Page - Texas Instruments

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VDS − Drain to Source Voltage − V
0
5
10
15
20
25
30
35
40
45
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
G001
VGS = 3V
VGS = 3.5V
VGS = 4.5V
VGS = 10V
VGS = 4V
VGS − Gate to Source Voltage − V
0
10
20
30
40
50
2.0
2.5
3.0
3.5
4.0
4.5
G002
VDS = 5V
TC = −55°C
TC = 25°C
TC = 125°C
Qg − Gate Charge − nC
0
2
4
6
8
10
12
0
2
4
6
8
10
G003
ID = 17A
VDS = 12.5V
VDS − Drain to Source Voltage − V
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
G004
f = 1MHz
VGS = 0V
CRSS = CGD
COSS = CDS + CGD
CISS = CGD + CGS
TC − Case Temperature − °C
0.0
0.5
1.0
1.5
2.0
2.5
−75
−25
25
75
125
175
G005
ID = 250µA
VGS − Gate to Source Voltage − V
0
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
G006
ID = 17A
TC = 125°C
TC = 25°C
CSD16409Q3
SLPS204A – AUGUST 2009 – REVISED MAY 2010
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
Figure 4. Gate Charge
Figure 5. Capacitance
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On Resistance vs. Gate Voltage
4
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