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DAC1208D650 Datasheet(PDF) 6 Page - Integrated Device Technology

No. de pieza DAC1208D650
Descripción Electrónicos  Dual 12-bit DAC; up to 650 Msps; 2?? 4??or 8??interpolating with JESD204A interface
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Fabricante Electrónico  IDT [Integrated Device Technology]
Página de inicio  http://www.idt.com
Logo IDT - Integrated Device Technology

DAC1208D650 Datasheet(HTML) 6 Page - Integrated Device Technology

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DAC1208D650 4
© IDT 2012. All rights reserved.
Product data sheet
Rev. 04 — 2 July 2012
6 of 96
Integrated Device Technology
DAC1208D650
2
, 4 or 8 interpolating DAC with JESD204A interface
[1]
P: power supply; G: ground; I: input; O: output.
[2]
H = heatsink (exposed die pad to be soldered to GND. A minimum of 81 thermal vias are required).
7. Limiting values
8. Thermal characteristics
[1]
Complies with JEDEC test board, in free air.
VIN_N0
52
I
serial interface lane 0 negative input
VIN_P0
53
I
serial interface lane 0 positive input
VDDD(1V8)
54
P
digital supply voltage 1.8 V
VIN_P1
55
I
serial interface lane 1 positive input
VIN_N1
56
I
serial interface lane 1 negative input
VIN_N2
57
I
serial interface lane 2 negative input
VIN_P2
58
I
serial interface lane 2 positive input
VDDD(1V8)
59
P
digital supply voltage 1.8 V
VIN_P3
60
I
serial interface lane 3 positive input
VIN_N3
61
I
serial interface lane 3 negative input
n.c.
62
-
not connected
n.c.
63
-
not connected
JTAG
64
I
JTAG test mode select (must be grounded)
GND
H[2]
G
ground
Table 2.
Pin description …continued
Symbol
Pin
Type[1]
Description
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDDA(3V3)
analog supply voltage (3.3 V)
0.5
+4.6
V
VDDA(1V8)
analog supply voltage (1.8 V)
0.5
+2.5
V
VDDD
digital supply voltage
0.5
+2.5
V
Tstg
storage temperature
55
+150
C
Tamb
ambient temperature
40
+85
C
Tj
junction temperature
40
+125
C
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-a)
thermal resistance from junction to ambient
[1] 18.7
K/W
Rth(j-c)
thermal resistance from junction to case
[1] 6.7
K/W


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