IN4148 datasheet(1/1 Pages) SSE | SILICON EPITAXIAL PLANAR SWITCHING DIODE

1 page

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

FEATURES

• Small glass structure ensures high reliability

• Fast switching

• Low leakage

• High temperature soldering guaranteed:

250

oC/10S/9.5mm lead length

at 5 lbs tension

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

• Case: Glass,hermetically sealed

• Polarity: Color band denotes cathode

• Mounting position: Any

MAXIMUM RATINGS AND CHARACTERISTICS

(Ratings at 25

oC ambient temperature unless otherwise specified)

SYMBOL

VALUE

UNITS

Reverse Voltage

Peak Reverse Voltage

VRM

100

Forward Current (average)

150

Repetitive Forward Peak Current

IFRM

300

Forward Voltage (IF=10mA)

Reverse Current (VR=20V)

Reverse Current (VR=75V)

µA

Reverse Current (VR=20V,TJ=100

oC)

IR2

Capacitance

(note 1)

Reverse Recovery Time

(note 2)

4nS

Thermal Resistance (junction to ambient)

(note 3)

Rθ(ja)

0.35

oC/mW

Operating Junction and Storage Temperature Range

TSTG,TJ

-55

+175

Notes:

1: VR=0V, f=1 MHz

2: IF=10mA to IR=1mA, VR=6V, RL=100

3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

http://www.sse-diode.com

IN4148

SILICON EPITAXIAL PLANAR

SWITCHING DIODE

REVERSE VOLTAGE: 75V

FORWARD CURRENT: 150mA

RATINGS

IR1

TECHNICAL

SPECIFICATION

DO - 35

Dimensions in inches and (millimeters)

1.0 (25.4)

MIN.

.018 (0.46)

.022 (0.56)

.120 (3.0)

.200 (5.1)

1.0 (25.4)

MIN.

DIA.

.060 (1.5)

.090 (2.3) DIA.

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HSK122	Silicon Epitaxial Planar Diode for High Voltage Switching	1 2 3 4 5 More	Hitachi Semiconductor
HVC132	Silicon Epitaxial Planar Pin Diode for High Frequency Switching	1 2 3 4 5	Hitachi Semiconductor
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