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SIA436DJ Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIA436DJ Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 63535 S11-2242-Rev. A, 14-Nov-11 Vishay Siliconix SiA436DJ New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 8V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 11 mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 2.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.35 0.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 5 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 8 V, VGS = 0 V 1 µA VDS = 8 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 15.7 A 0.0078 0.0094 Ω VGS = 2.5 V, ID = 14.9 A 0.0087 0.0105 VGS = 1.8 V, ID = 13.6 A 0.0104 0.0125 VGS = 1.5 V, ID = 2.5 A 0.0120 0.0180 VGS = 1.2 V, ID = 1.5 A 0.0180 0.0360 Forward Transconductancea gfs VDS = 4 V, ID = 15.7 A 70 S Dynamicb Input Capacitance Ciss VDS = 4 V, VGS = 0 V, f = 1 MHz 1508 pF Output Capacitance Coss 535 Reverse Transfer Capacitance Crss 321 Total Gate Charge Qg VDS = 4 V, VGS = 5 V, ID = 15.7 A 16.8 25.2 nC VDS = 4 V, VGS = 4.5 V, ID = 15.7 A 15 23 Gate-Source Charge Qgs 1.7 Gate-Drain Charge Qgd 0.9 Gate Resistance Rg f = 1 MHz 0.5 2.5 5 Ω Turn-on Delay Time td(on) VDD = 4 V, RL = 0.4 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 11 20 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 30 45 Fall Time tf 816 Turn-on Delay Time td(on) VDD = 4 V, RL = 0.4 Ω ID ≅ 10 A, VGEN = 5 V, Rg = 1 Ω 10 20 Rise Time tr 10 20 Turn-Off Delay Time td(off) 30 45 Fall Time tf 816 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 12 A Pulse Diode Forward Current ISM 50 Body Diode Voltage VSD IS = 10 A, VGS = 0 V 0.73 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C 10 20 ns Body Diode Reverse Recovery Charge Qrr 14 nC Reverse Recovery Fall Time ta 4 ns Reverse Recovery Rise Time tb 6 |
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