Features

Low current rectification and high speed switching.

Extremely small surface mount type.

Up to 200mA current capability.

Silicon epitaxial planar chip, metal silicon junction.

Lead-free parts meet exceeds environmental

standards of MIL-STD-19500 /228

Suffix "-H" indicates Halogen-free part,ex.BAT42WS-H.

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Package outline

Page 2

Formosa MS

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

PARAMETER

Repetitive peak reverse voltage

Continuous reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Power dissipation

Storage temperature

Operating temperature

@t < 1.0ms

CONDITIONS

Symbol

V

RRM

V

R

I

FAV

I

FSM

P

D

T

J

T

STG

MIN.

-55

-65

TYP.

200

MAX.

30

30

200

4.0

+125

+125

UNIT

V

V

mA

A

mW

o

A

PARAMETER

Forward voltage

I = 10 mA

BAT42WS

F

Reverse current

O

V = 25 V , T = 100 C

R

J

V = 25 V

R

CONDITIONS

Symbol

V

F

I

R

MIN.

TYP.

MAX.

0.40

0.5

100

UNIT

µA

o

A

BAT42WS / BAT43WS

Dimensions in inches and (millimeters)

SOD-323F

0.039(1.00)

0.031(0.80)

0.071(1.80)

0.063(1.60)

0.106(2.70)

0.091(2.30)

Mechanical data

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MIL-STD-750, Method 2026

Epoxy:UL94-V0 rated flame retardant

SOD-323F

Thermal resistance

500

R

θJA

Junction to ambient (Note 1)

I = 200 mA

BAT42WS

F

BAT43WS

1.0

1.0

I = 50 mA

BAT42WS

F

I = 2.0 mA

BAT43WS

F

I = 15mA

BAT43WS

F

0.65

0.33

0.45

0.26

Total capacitance

Reverse recovery time

V = 1.0V, f = 1.0MHz

R

I = I = 10mA,

F

R

C

T

t

rr

10

5.0

ns

pF

V

Document ID

Issued Date

Revised Date

Revision

Page.

-

-

-

-

-

Small Signal Schottky Diode

200mA

Schottky Diodes-30V

Surface Mount Small Signal

Reverse Breakdown Voltage

I =100uA

R

V

(BR)R

30

V

Irr= 0. 1xIR , R = 100Ω

L

DS-22163H

2009/08/10

2010/03/10

B

7

Note:1. Parts Mounted on FR-4 PC Board with recommended pad layout.