TPIC5421LNE datasheet(7/16 Pages) TI1

No. de pieza	TPIC5421LNE

Descripción Electrónicos	H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY

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TPIC5421L

HBRIDGE GATEPROTECTED LOGICLEVEL

POWER DMOS ARRAY

SLIS027A − OCTOBER 1994 − REVISED OCTOBER 1995

7

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

TYPICAL CHARACTERISTICS

1.5

1

0.5

0

2

2.5

GATE-TO-SOURCE THRESHOLD VOLTAGE

vs

JUNCTION TEMPERATURE

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

vs

CASE TEMPERATURE

TC − Case Temperature − °C

0.3

0.2

0.1

0

0.4

0.5

− 40 − 20

0

20

40

60

80

100 120 140 160

VGS = 4.5 V

VGS = 5 V

ID = 1 A

TJ − Junction Temperature − °C

− 40 − 20

0

20

40

60

80

100 120 140 160

ID = 100 µA

ID = 1 mA

VDS = VGS

0.6

0.7

0.8

Figure 5

Figure 6

STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE

vs

DRAIN CURRENT

ID − Drain Current − A

0.4

0.3

0.2

0.1

0.5

0.6

0.7

0.8

0.9

1

0.1

1

10

VGS = 4.5 V

VGS = 5 V

TJ = 25°C

DRAIN CURRENT

vs

DRAIN-TO-SOURCE VOLTAGE

1

0

2

3

24

6

8

10

12

14

16

18

20

0

VDS − Drain-to-Source Voltage − V

nVGS = 0.2 V

TJ = 25°C

VGS = 3 V

Figure 7

Figure 8

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