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TPIC3322LD Datasheet(PDF) 1 Page - Texas Instruments |
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TPIC3322LD Datasheet(HTML) 1 Page - Texas Instruments |
1 / 12 page TPIC3322L 3CHANNEL COMMONDRAIN LOGICLEVEL POWER DMOS ARRAY SLIS035B − JUNE 1994 − REVISED SEPTEMBER 1995 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 Copyright 1995, Texas Instruments Incorporated 1 • Low r DS(on) . . . 0.6 Ω Typ • High-Voltage Outputs ...60 V • Pulsed Current . . . 2.25 A Per Channel • Fast Commutation Speed • Direct Logic-Level Interface description The TPIC3322L is a monolithic logic-level power DMOS transistor array that consists of three isolated N-channel enhancement-mode DMOS transistors configured with a common drain and open sources. The TPIC3322L is offered in a standard 8-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of − 40 °C to 125°C. schematic diagram SOURCE1 GATE1 GATE2 GATE3 SOURCE2 SOURCE3 DRAIN 5 2 8 Q1 Q2 Q3 6 4 3 1 Z1 Z2 Z3 7 D1 GND absolute maximum ratings over operating case temperature range (unless otherwise noted)† Drain-to-source voltage, VDS 60 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source-to-GND voltage 100 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain-to-GND voltage 100 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-to-source voltage, VGS ±20 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous drain current, each output, all outputs on, TC = 25°C 0.75 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous source-to-drain diode current, TC = 25°C 0.75 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pulsed drain current, each output, Imax, TC = 25°C (see Note 1 and Figure 15) 2.25 A . . . . . . . . . . . . . . . . . . Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4) 19 mJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total power dissipation at (or below) TC = 25°C (see Figure 15) 0.95 W . . . . . . . . . . . . . . . . . . . . Operating virtual junction temperature range, TJ −40 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating case temperature range, TC −40 °C to 125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage temperature range, Tstg −65 °C to 150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: Pulse duration = 10 ms and duty cycle = 2%. 1 2 3 4 8 7 6 5 SOURCE1 GATE2 SOURCE2 SOURCE3 GATE1 GND DRAIN GATE3 D PACKAGE (TOP VIEW) PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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