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STA533WF Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STA533WF
Descripción Electrónicos  18-volt, 3-amp, quad power half-bridge
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STA533WF Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STA533WF
4/15
Doc ID 17658 Rev 2
2
Electrical characteristics
Unless otherwise stated, the test conditions for Table 6 below are VL = 3.3 V, VCC = 18 V,
RL =8 Ω, fSW = 384 kHz and Tamb = 25 °C.
Table 3.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage (Pins 4, 7, 12, 15)
23
V
VLmax
Voltage on pin 23
4.0
V
Vinputs
Voltage on pins 25, 26, 29 to 32
-0.3 to VL + 0.3
V
Vconfig
Voltage on pins 24
-0.3 to VDD + 0.3
V
Tstg, Tj
Storage and junction temperature
-40 to 150
°C
Table 4.
Recommended operating conditions
Symbol
Parameter
Min
Typ
Max
Unit
VCC
DC supply voltage (Pins 4, 7, 12, 15)
5.0
-
18
V
VL
Input logic reference
2.7
3.3
3.6
V
Tamb
Ambient temperature
0
-
70
°C
Table 5.
Thermal data
Symbol
Parameter
Min
Typ
Max
Unit
Tj-case
Thermal resistance junction to case (thermal pad)
-
-
1.5
°C/W
TjSD
Thermal shut-down junction temperature
-
150
-
°C
Twarn
Thermal warning temperature
-
130
-
°C
thSD
Thermal shut-down hysteresis
-
25
-
°C
Table 6.
Electrical characteristics
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
POUT
Output power in BTL mode
THD+N > 10%
-
20
-
W
RdsON
Power P-channel/N-channel
MOSFET on resistance
Idd = 1 A
-
180
230
m
Ω
Idss
Power P-channel/N-channel
leakage
-
--10
μA
gN
Power P-channel RdsON
matching
Idd = 1 A
95
--%
gP
Power N-channel RdsON
matching
Idd = 1 A
95
--%
Dt_s
Low current dead time (static)
see Figure 2
-
5
10
ns


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