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E94915A58-PK

65536-word

× 8-bit High Speed CMOS Static RAM

Description

The CXK58512TM/M is a high speed CMOS static

RAM organized as 65536-words by 8 bits.

A polysilicon TFT cell technology realized extremely

low stand-by current and higher data retention

stability.

Special feature are low power consumption, high

speed.

The CXK58512TM/M is a suitable RAM for portable

equipment with battery back up.

Features

• Fast access time

(Access time)

-55LL

55ns (Max.)

-70LL

70ns (Max.)

-10LL

100ns (Max.)

• Low standby current

10µA (Max.)

• Low data retention current

6µA (Max.)

• Single +5V supply: +5V ± 10%

• Low voltage data retention: 2.0V (Min.)

• Broad package line-up

CXK58512TM

8mm

× 20mm 32 pin TSOP package

CXK58512M

525mil 32 pin SOP Package

Function

65536-word

× 8 bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

∗

Row

Decoder

Buffer

Buffer

I/O Buffer

I/O1

I/O8

A15

A13

A8

A11

A9

A7

A6

A5

A14

A12

A4

A3

A10

A0

A2

A1

OE

WE

CE1

CE2

Buffer

I/O Gate

Column

Decoder

Memory

Matrix

1024

× 512

GND

CXK58512TM

32 pin TSOP (Plastic)

CXK58512M

32 pin SOP (Plastic)

Block Diagram

∗

Under development

For the availability of this product, please contact the sales office.