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CXK5T8257BTM-10LLX Datasheet(PDF) 1 Page - Sony Corporation |
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CXK5T8257BTM-10LLX Datasheet(HTML) 1 Page - Sony Corporation |
1 / 10 page – 1 – CXK5T8257BTM/BYM/BM -10LLX/12LLX PE96509-ST 32768-word × 8-bit High Speed CMOS Static RAM Description The CXK5T8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits. Special feature are low power consumption and high speed. The CXK5T8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation -10LLX 100ns (Max.) -12LLX 120ns (Max.) 3.3V operation -10LLX 85ns (Max.) -12LLX 100ns (Max.) • Low standby current: 7.0µA (Max.) • Low power data retention: 2.0V (Min.) • Available in many packages CXK5T8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5T8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. CXK5T8257BTM 28 pin TSOP (Plastic) CXK5T8257BYM 28 pin TSOP (Plastic) CXK5T8257BM 28 pin SOP (Plastic) Memory Matrix 512 × 512 I/O Gate Column Decoder Row Decoder Buffer Buffer Buffer I/O Buffer VCC GND I/O1 I/O8 A14 A13 A12 A11 A9 A8 A7 A6 A5 A10 A4 A3 A2 A1 A0 OE WE CE Block Diagram Preliminary For the availability of this product, please contact the sales office. |
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