CXK5V8257BYM-10LL datasheet(3/9 Pages) SONY

No. de pieza	CXK5V8257BYM-10LL

Descripción Electrónicos	32768-word X 8-bit High Speed CMOS Static RAM

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Fabricante Electrónico	SONY [Sony Corporation]

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CXK5V8257BTM/BYM/BM

Input pulse high level

Input pulse low level

Input rise time

Input fall time

Input and output reference level

-70LL

-10LL

VIH = 2.0V

VIL = 0.8V

tr = 5ns

tf = 5ns

1.4V

CL∗2 = 30pF, 1TTL

CL∗2 = 100pF, 1TTL

Item

Conditions

TTL

CL

Output load

conditions

AC Characteristics

• AC test conditions (VCC = 3.3V ± 0.3V, Ta = 0 to +70°C)

∗2 C

L

includes scope and jig capacitances.

I/O capacitance

(Ta = 25°C, f = 1MHz)

Input capacitance

I/O capacitance

Item

Symbol Test condition

Min.

Typ.

Max.

Unit

CIN

CI/O

VIN = 0V

VI/O = 0V

—

8

10

pF

Note) This parameter is sampled and is not 100% tested.

Electrical Characteristics

• DC characteristics

(VCC = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C)

Item

Symbol

Test Conditions

Min.

Typ.∗1

Max.

Unit

Input leakage current

Output leakage

current

Operating power

supply current

Average operating

current

Standby current

Output high

voltage

Output low

voltage

ILI

ILO

ICC1

ICC2

ISB1

ISB2

VOH

VOL

VIN = GND to VCC

CE = VIH,

OE = VIH or WE = VIL,

VI/O = GND to VCC

CE = VIL,

VIN = VIH or VIL,

IOUT = 0mA

Min. cycle,

Duty = 100%, IOUT = 0mA

CE

≥ VCC – 0.2V

CE = VIH

IOH = –2mA

IOL = 2.0mA

–0.5

—

2.4

—

0.5

2

40

35

3.5

0.7

0.35

0.7

—

0.4

—

0.9

21

18

—

0.12

0.06

—

µA

mA

µA

mA

V

∗1 V

CC

= 3.3V, Ta = 25°C

70LL

10LL

0 to +70°C

0 to +40°C

+25°C

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CXK5V8257BYM-10LL Datasheet(PDF) 3 Page - Sony Corporation

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