74AUP1G34

Document number: DS35155 Rev. 1 - 2

7 of 11

www.diodes.com

August 2012

© Diodes Incorporated

74AUP1G34

Parameter

Test Conditions

Typ

Unit

Power Dissipation

Capacitance

f = 1MHz

No Load

0.8V

6.7

pF

1.2V ± 0.1V

6.6

1.5V ± 0.1V

6.5

1.8V ± 0.15V

6.5

2.5V ± 0.2V

6.4

3.3V ± 0.3V

6.3

Input Capacitance

0V or 3.3V

1.5

pF

Thermal Resistance

Junction-to-Ambient

SOT353

(Note 6)

371

°C/W

X2-DFN1410-6

430

X2-DFN1010-6

445

Thermal Resistance

Junction-to-Case

SOT353

(Note 6

143

°C/W

X2-DFN1410-6

190

X2-DFN1010-6

250

Notes:

6. Test condition for SOT353, X2-DFN1410-6, and X2-DFN1010-6 devices mounted on FR-4 substrate PC board, 2oz copper, with minimum

recommended pad layout.

Parameter Measurement Information

(see Note A)

From Output

Under Test

=1M

Ω

Inputs

0.8V

≤3ns

5, 10, 15, 30 pF

1.2V ± 0.1V

≤3ns

5, 10, 15, 30 pF

1.5V ± 0.1V

≤3ns

5, 10, 15, 30 pF

1.8V ± 0.15V

≤3ns

5, 10, 15, 30 pF

2.5V ± 0.2V

≤3ns

5, 10, 15, 30 pF

3.3V ± 0.3V

≤3ns

5, 10, 15, 30 pF

Voltage Waveform Pulse Duration

Voltage Waveform Propagation Delay Times

Inverting and Non Inverting Outputs

Figure 1. Load Circuit and Voltage Waveforms

Notes:

A. Includes test lead and test apparatus capacitance.

B. All pulses are supplied at pulse repetition rate

≤ 10 MHz.

C. Inputs are measured separately one transition per measurement.