Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
FDS4559 Datasheet(PDF) 7 Page - Fairchild Semiconductor |
|
FDS4559 Datasheet(HTML) 7 Page - Fairchild Semiconductor |
7 / 8 page Typical Characteristics: Q1 0 2 4 6 8 10 02 46 8 10 12 14 Qg, GATE CHARGE (nC) I D = 4.5A V DS = 10V 20V 30V 0 100 200 300 400 500 600 700 800 900 0 1020 30405060 VDS, DRAIN TO SOURCE VOLTAGE (V) C ISS C RSS C OSS f = 1MHz V GS = 0 V Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 10ms 1m 100 µs V GS= 10V SINGLE PULSE RθJA= 135 oC/W T A= 25 oC R DS(ON) LIMIT 0 10 20 30 40 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 135 oC/W TA = 25 oC Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 135°C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4559_F085 Rev A (W) |
Número de pieza similar - FDS4559_08 |
|
Descripción similar - FDS4559_08 |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |