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FDD4N60NZ Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDD4N60NZ Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDD4N60NZ Rev.C0 www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 *Notes: 1. VGS = 0V 2. ID = 250µA TJ, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *Notes: 1. VGS = 10V 2. ID = 1.7A TJ, Junction Temperature [ o C] 25 50 75 100 125 150 0 1 2 3 4 R θ JC = 1.1 o C/W TC, Case Temperature [ o C] V GS = 10V 1 10 100 1000 0.01 0.1 1 10 30 30µs 100µs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 o C 2. TJ = 150 o C 3. Single Pulse DC 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *Notes: 1. ZθJC(t) = 1.1 o C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulse Rectangular Pulse Duration [sec] t1 PDM t2 |
Número de pieza similar - FDD4N60NZ_12 |
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