FDD6685_11 datasheet(2/6 Pages) FAIRCHILD

No. de pieza	FDD6685

Descripción Electrónicos	30V P-Channel PowerTrench횘 MOSFET

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FDD6685 Rev D1

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDD6685

13”

12mm

2500 units

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ Max

Units

Drain-Source Avalanche Ratings (Note 4)

EAS

Single Pulse Drain-Source

Avalanche Energy

ID = –11 A

42

mJ

IAS

Maximum Drain-Source

Avalanche Current

–11

A

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = –250

µA

–30

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = –250

µA, Referenced to 25°C

–24

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = –24 V,

VGS = 0 V

–1

µA

IGSS

Gate–Body Leakage

VGS = ±25V,

VDS = 0 V

±100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = –250

µA

–1

–1.8

–3

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = –250

µA, Referenced to 25°C

5

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = –10 V,

ID = –11 A

VGS = –4.5 V,

ID = –9 A

VGS = –10 V,ID = –11 A,TJ=125

°C

14

21

20

30

m

Ω

ID(on)

On–State Drain Current

VGS = –10 V,

VDS = –5 V

–20

A

gFS

Forward Transconductance

VDS = –5 V,

ID = –11 A

26

S

Dynamic Characteristics

Ciss

Input Capacitance

1715

pF

Coss

Output Capacitance

440

pF

Crss

Reverse Transfer Capacitance

VDS = –15 V,

V GS = 0 V,

f = 1.0 MHz

225

pF

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

3.6

Ω

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

17

31

ns

tr

Turn–On Rise Time

11

21

ns

td(off)

Turn–Off Delay Time

43

68

ns

tf

Turn–Off Fall Time

VDD = –15 V,

ID = –1 A,

VGS = –10 V,

RGEN = 6

Ω

21

34

ns

Qg

Total Gate Charge

17

24

nC

Qgs

Gate–Source Charge

9

nC

Qgd

Gate–Drain Charge

VDS = –15V,

ID = –11 A,

VGS = –5 V

4

nC

Drain–Source Diode Characteristics and Maximum Ratings

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = –3.2 A (Note 2)

–0.8

–1.2

V

Trr

Diode Reverse Recovery Time

26

ns

Qrr

Diode Reverse Recovery Charge

IF = –11 A,

diF/dt = 100 A/µs

13

nC

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