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SI8622ED-B-IS Datasheet(PDF) 11 Page - Silicon Laboratories

No. de pieza SI8622ED-B-IS
Descripción Electrónicos  LOW-POWER SINGLE AND DUAL-CHANNEL DIGITAL ISOLATORS
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Fabricante Electrónico  SILABS [Silicon Laboratories]
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SI8622ED-B-IS Datasheet(HTML) 11 Page - Silicon Laboratories

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Rev. 1.3
11
Si8610/20/21/22
Table 4. Electrical Characteristics
(VDD1 =2.5 V ±5%, VDD2 =2.5 V ±5%, TA = –40 to 125 ºC)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VDD Undervoltage Threshold
VDDUV+
VDD1, VDD2 rising
1.95
2.24
2.375
V
VDD Undervoltage Threshold
VDDUV–
VDD1, VDD2 falling
1.88
2.16
2.325
V
VDD Negative-Going Lockout
Hysteresis
VDDHYS
50
70
95
mV
Positive-Going Input Threshold
VT+
All inputs rising
1.6
1.9
V
Negative-Going Input Threshold
VT–
All inputs falling
1.1
1.4
V
Input Hysteresis
VHYS
0.40
0.45
0.50
V
High Level Input Voltage
VIH
2.0
V
Low Level Input Voltage
VIL
——
0.8
V
High Level Output Voltage
VOH
loh = –4 mA
VDD1,VDD2 –0.4
2.3
V
Low Level Output Voltage
VOL
lol = 4 mA
0.2
0.4
V
Input Leakage Current
IL
——
±10
µA
Output Impedance1
ZO
—50
DC Supply Current (All inputs 0 V or at supply)
Si8610Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
0.6
0.8
1.8
0.8
1.2
1.5
2.9
1.5
mA
Si8620Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
0.8
1.4
3.3
1.4
1.4
2.2
5.3
2.2
mA
Si8621Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
1.2
1.2
2.4
2.4
1.9
1.9
3.8
3.8
mA
Si8622Bx, Ex
VDD1
VDD2
VDD1
VDD2
VI = 0(Bx), 1(Ex)
VI = 0(Bx), 1(Ex)
VI = 1(Bx), 0(Ex)
VI = 1(Bx), 0(Ex)
2.6
3.3
4.0
4.8
4.2
5.3
6.4
7.7
mA
Notes:
1. The nominal output impedance of an isolator driver channel is approximately 50
, ±40%, which is a
combination of the value of the on-chip series termination resistor and channel resistance of the output driver
FET. When driving loads where transmission line effects will be a factor, output pins should be appropriately
terminated with controlled impedance PCB traces.
2. tPSK(P-P) is the magnitude of the difference in propagation delay times measured between different units
operating at the same supply voltages, load, and ambient temperature.
3. Start-up time is the time period from the application of power to valid data at the output.


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