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2N2324 Datasheet(PDF) 1 Page - Comset Semiconductor

No. de pieza 2N2324
Descripción Electrónicos  SILICON THYRISTORS
Download  3 Pages
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Fabricante Electrónico  COMSET [Comset Semiconductor]
Página de inicio  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N2324 Datasheet(HTML) 1 Page - Comset Semiconductor

  2N2324 Datasheet HTML 1Page - Comset Semiconductor 2N2324 Datasheet HTML 2Page - Comset Semiconductor 2N2324 Datasheet HTML 3Page - Comset Semiconductor  
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2n2322 to 2n2326
12/11/2012
COMSET SEMICONDUCTORS
1 | 3
S
SIIL
LIIC
CO
ON
N T
TH
HY
YR
RIIS
ST
TO
OR
RS
S
All-diffused PNPN thyristors designed for grating operation in mA/
µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
2N2322
2N2323
2N2324
2N2325
2N2326
Unit
VRRM(REP)
Peak reverse blocking voltage
(*)
25
50
100
150
200
V
VRSM(NON-
REP)
Non-repetitive peak blocking
reverse voltage (t<5.0 ms)
40
75
150
225
300
V
IT(RMS)
Forward Current RMS (all
conduction angles)
1.6
A
ITSM
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal
Equilibrium is Restored.
15
A
PGM
Peak Gate Power – Forward
0.1
W
PG(AV)
Average Gate Power -
Forward
0.01
W
IGM
Peak Gate Current – Forward
0.1
A
VGFM
Peak Gate Voltage - Forward
6.0
V
VGRM
Peak Gate Voltage - Reverse
6.0
V
TJ
Operating Junction
Temperature Range
-65 to +125
°C
TSTG
Storage Temperature Range
-65 to +150


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