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BUZ73A Datasheet(PDF) 1 Page - Comset Semiconductor |
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BUZ73A Datasheet(HTML) 1 Page - Comset Semiconductor |
1 / 3 page BUZ73A 01/10/2012 COMSET SEMICONDUCTORS 1/3 SEMICONDUCTORS N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS FEATURE ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VDS Drain-Source Voltage 200 V VSD Drain-Source diode Voltage <1.7 V IDS Continuous Drain Current TC= 37°C 5.5 A IDM Pulsed Drain Current TC= 25°C 22 A VGS Gate-Source Voltage 20 V RDS(on) Drain-Source on Resistance 0.6 Ω PT Power Dissipation at Case Temperature TC= 25°C 40 Watts tJ Operating Temperature -55 to +150 °C tstg Storage Temperature range -55 to +150 tL Lead Temperature 1.6 mm from case for 10 seconde 300 This is an N-channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits and housed in a TO-220 envelope. |
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