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FM23MLD16-60-BG Datasheet(PDF) 1 Page - Cypress Semiconductor |
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FM23MLD16-60-BG Datasheet(HTML) 1 Page - Cypress Semiconductor |
1 / 13 page This product conforms to the specifications per the terms of the Ramtron standard warranty. Ramtron International Corporation The product has completed Ramtron’s internal qualification testing and has reached 1850 Ramtron Drive, Colorado Springs, CO 80921 production status. (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Rev. 2.0 June 2012 Page 1 of 13 FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 • Configurable as 1Mx8 Using /UB, /LB • High Endurance 100 Trillion (10 14) Read/Writes • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process SRAM Compatible • JEDEC 512Kx16 SRAM Pinout • 60 ns Access Time, 115 ns Cycle Time Advanced Features • Low VDD Monitor Protects Memory against Inadvertent Writes Superior to Battery-backed SRAM Modules • No Battery Concerns • Monolithic Reliability • True Surface Mount Solution, No Rework Steps • Superior for Moisture, Shock, and Vibration Low Power Operation • 2.7V – 3.6V Power Supply • 14 mA Active Current Industry Standard Configuration • Industrial Temperature -40 ° C to +85° C • 48-pin “Green”/RoHS FBGA package Description The FM23MLD16 is a 512Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory. In-system operation of the FM23MLD16 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by a chip enable or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM23MLD16 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. The FM23MLD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition. The FM23MLD16 F-RAM is available in a 48-ball FBGA surface mount package. Device specifications are guaranteed over the industrial temperature range of –40°C to +85°C. 48-Ball FBGA Top View (Ball Down) /LB /OE A0 A1 A2 CE2 DQ8 /UB A3 A4 /CE1 DQ0 DQ9 DQ10 A5 A6 DQ1 DQ2 VSS DQ11 A17 A7 DQ3 VDD VDD DQ12 NC A16 DQ4 VSS DQ14 DQ13 A14 A15 DQ5 DQ6 DQ15 NC A12 A13 /WE DQ7 A18A8 A9A10 A11 NC 12 3 4 56 A B C D E F G H Ordering Information FM23MLD16-60-BG 60 ns access, 48-pin “Green”/RoHS FBGA |
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