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FM25V20-GTR Datasheet(PDF) 1 Page - Cypress Semiconductor |
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FM25V20-GTR Datasheet(HTML) 1 Page - Cypress Semiconductor |
1 / 17 page This product conforms to specifications per the terms of the Ramtron Ramtron International Corporation standard warranty. The product has completed Ramtron’s internal 1850 Ramtron Drive, Colorado Springs, CO 80921 qualification testing and has reached production status. (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Rev. 3.0 August 2012 Page 1 of 17 FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM Organized as 256K x 8 bits High Endurance 100 Trillion (10 14) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40 MHz Frequency Direct Hardware Replacement for Serial Flash SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme Hardware Protection Software Protection Device ID Device ID reads out Manufacturer ID & Part ID Low Voltage, Low Power Low Voltage Operation 2.0V – 3.6V 100 A Standby Current (typ.) 3 A Sleep Mode Current (typ.) Industry Standard Configurations Industrial Temperature -40C to +85C 8-pin “Green”/RoHS EIAJ SOIC Package 8-pin “Green”/RoHS TDFN Package 8-pin “Green”/POHS PDIP Package Description The FM25V20 is a 2-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories. Unlike Serial Flash, the FM25V20 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after it has been transferred to the device. The next bus cycle may commence without the need for data polling. The product offers very high write endurance, orders of magnitude more endurance than Serial Flash. Also, F-RAM exhibits lower power consumption than Serial Flash. These capabilities make the FM25V20 ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding controls where the long write time of Serial Flash can cause data loss. The FM25V20 provides substantial benefits to users of Serial Flash as a hardware drop-in replacement. The device uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device is guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration S Q W VSS VDD HOLD C D 1 2 3 4 8 7 6 5 Pin Name Function /S Chip Select /W Write Protect /HOLD Hold C Serial Clock D Serial Data Input Q Serial Data Output VDD Supply Voltage VSS Ground /S Q /W VSS VDD /HOLD C D 1 2 3 4 8 7 6 5 Top View |
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Descripción similar - FM25V20-GTR |
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