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2N4003NLT1 Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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2N4003NLT1 Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP |
1 / 5 page SOT-23 N−Channel Gate ESD Protection, Features • Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design • ESD Protected Gate • Applications • Level Shifters • Level Switches • Portable Applications MARKING DIAGRAM Drain Gate Source • Low Side Load Switches 1 3 2 3 Drain 1 Gate 2 Source TR8 TR8 = Specific Device Code M = Month Code Device Package Shipping ORDERING INFORMATION 2N4003NLT1 SOT−23 3000/Tape & Reel MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current (Note 1) Steady State TA = 25°C ID 0.5 A TA = 85°C 0.37 Power Dissipation (Note 1) Steady State PD 0.69 W Continuous Drain Current (Note 1) t < 10 s TA = 25°C ID 0.56 A TA = 85°C 0.40 Power Dissipation (Note 1) t < 5 s PD 0.83 W Pulsed Drain Current tp = 10 ms IDM 1.7 A Operating Junction and Storage Temperature TJ, Tstg −55 to 150 °C Source Current (Body Diode) IS 1.0 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 180 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 150 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. • Low Gate Charge for Fast Switching • Minimum Breakdown Voltage Rating of 30 V 2012-10 WILLAS ELECTRONIC CORP. 2N4003NLT1 Small Signal MOSFET 30V,0.56A, Single,SOT-23 Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • • Package outline Mechanical data Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 , Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) SOD-123H Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE WILLAS BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS ELECTRONIC CORP. 201 2-06 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts Volts Volts Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 Amps Amps Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -55 to +125 40 120 - 65 to +175 -55 to +150 ℃/W PF ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 0.9 0.92 Volts @TA=25℃ 0.5 Maximum Average Reverse Current at Rated DC Blocking Voltage @TA=125℃ IR 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • • |
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