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2N4003NLT1 Datasheet(PDF) 1 Page - WILLAS ELECTRONIC CORP

No. de pieza 2N4003NLT1
Descripción Electrónicos  30V,0.56A, Single, SOT-23
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Fabricante Electrónico  WILLAS [WILLAS ELECTRONIC CORP]
Página de inicio  http://www.willas.com.tw
Logo WILLAS - WILLAS ELECTRONIC CORP

2N4003NLT1 Datasheet(HTML) 1 Page - WILLAS ELECTRONIC CORP

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SOT-23
N−Channel
Gate ESD Protection,
Features
Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design
ESD Protected Gate
Applications
Level Shifters
Level Switches
Portable Applications
MARKING DIAGRAM
Drain
Gate
Source
Low Side Load Switches
1
3
2
3
Drain
1
Gate
2
Source
TR8
TR8
= Specific Device Code
M
= Month Code
Device
Package
Shipping
ORDERING INFORMATION
2N4003NLT1
SOT−23
3000/Tape & Reel
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
ID
0.5
A
TA = 85°C
0.37
Power Dissipation
(Note 1)
Steady State
PD
0.69
W
Continuous Drain
Current (Note 1)
t < 10 s TA = 25°C
ID
0.56
A
TA = 85°C
0.40
Power Dissipation
(Note 1)
t < 5 s
PD
0.83
W
Pulsed Drain Current
tp = 10 ms
IDM
1.7
A
Operating Junction and Storage Temperature
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
1.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
180
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RqJA
150
Junction−to−Ambient − Steady State (Note 2)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Low Gate Charge for Fast Switching
Minimum Breakdown Voltage Rating of 30 V
2012-10
WILLAS ELECTRONIC CORP.
2N4003NLT1
Small Signal MOSFET 30V,0.56A, Single,SOT-23
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Package outline
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
PACKAGE
WILLAS
BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WILLAS ELECTRONIC CORP.
201
2-06
 
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
 
IFSM
1.0
 
30
Amps
 
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
 
 
-55 to +125
40
120
 
- 65 to +175
 
 
-55 to +150
℃/W
PF
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Volts
@TA=25℃
0.5
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=125℃
IR
10
 
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"


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