MJ10020 MJ10021

4

Motorola Bipolar Power Transistor Device Data

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

RBSOA AND INDUCTIVE SWITCHING

RESISTIVE SWITCHING

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V

VCC = 175 V

RL = 5.6 Ω

Pulse Width = 25

µs

INDUCTIVE TEST CIRCUIT

TURN–ON TIME

IB1 adjusted to

obtain the forced

hFE desired

TURN–OFF TIME

Use inductive switching

driver as the input to

the resistive test circuit.

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUIT

OUTPUT WAVEFORMS

IB1

1

2

PW Varied to Attain

IC = 100 mA

20

Ω

1

5 V

0

2

1

INPUT

2

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1

Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

1

2

TUT

RL

VCC

t1 ≈

Lcoil (ICM)

VCC

t2 ≈

Lcoil (ICM)

VClamp

t1

ICM

tf Clamped

tf

t

t

Vclamp

t2

TIME

VCEM

* Adjust – V such that VBE(off) = 5 V except as required for RBSOA (Figure 14).

tfi

trv

IC

VCE

90% IB1

ICM

VCEM

90% VCEM

90% ICM

10%

ICM

2% IC

IB

tsv

tti

tc

Figure 7. Inductive Switching Measurements

TIME

Figure 8. Typical Peak Reverse Base Current

10

0

VBE(off), BASE–EMITTER VOLTAGE (VOLTS)

0

1.0

2.0

3.0

4.0

8.0

7.0

5.0

3.0

IC = 30 A

IB1 = 1.2 A

VCLAMP = 200 V

TJ = 25°C

9.0

8.0

6.0

4.0

2.0

1.0

7.0

6.0

5.0

Figure 9. Typical Inductive Switching Times

3.2

0

VBE(off), BASE–EMITTER VOLTAGE (VOLTS)

0

1.0

2.0

3.0

4.0

8.0

2.0

1.6

1.2

ICM = 30 A

IC/IB = 25

2.8

2.4

0.8

0.4

7.0

6.0

5.0

2.4

1.5

1.2

0.9

2.1

1.8

0.6

0.3

tsv @ 100°C

tsv @ 25°C

tc @ 100°C

tc @ 25°C

Vclamp

10% VCEM