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STK621-061-E Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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STK621-061-E Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 8 page STK621-061-E No.A1032-2/8 Specifications Absolute Maximum Ratings at Tc = 25 °C Parameter Symbol Conditions Ratings unit Supply voltage VCC + - −, surge < 500V *1 450 V Collector-emitter voltage VCE + - U (V, W) or U (V, W) - − 600 V Output current IO +, −, U, V, W terminal current ±30 A Output peak current Iop +, −, U, V, W terminal current PW = 100μs ±45 A Pre-driver supply voltage VD1, 2, 3, 4 VB1 - U, VB2 - V, VB3 - W, VDD - VSS *2 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 terminal 0 to 7 V FAULT terminal voltage VFAULT FAULT terminal 20 V Maximum loss Pd Per 1 channel 49 W Junction temperature Tj IGBT, FRD junction temperature 150 °C Storage temperature Tstg -40 to +125 °C Operating temperature TC H-IC case temperature -20 to +100 °C Tightening torque A screw part at use M4 type screw *3 1.17 N•m Withstand voltage Vis 50Hz sine wave AC 1 minute *4 2000 VRMS In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage. *1 Surge voltage developed by the switching operation due to the wiring inductance between the + and –terminals. *2 VD1 = between VB1-U, VD2 = VB2-V, VD3 = VB3-W, VB4 = VDD-VSS, terminal voltage. *3 Flatness of the heat-sink should be lower than 0.25mm. *4 The test condition is AC 2500V, 1 second. Electrical Characteristics at Tc=25 °C, VD=15V Ratings Parameter Symbol Conditions Test Circuit min typ max unit Power output part Collector-to-emitter cut-off current ICE VCE = 600V Fig.1 0.5 mA Boot-strap diode reverse current IR (BD) VR (BD) = 600V Fig.1 0.5 mA Upper side 1.8 V Collector-to-emitter saturation voltage VCE (SAT) IO = 15A Lower side Fig.2 2.0 V Upper side 1.7 V Diode forward voltage VF IO = -15A Lower side Fig.3 1.9 V θj-c (T) IGBT 2.1 °C/W Junction-to-substrate thermal resistance θj-c (D) FWD 2.5 °C/W Control (Pre-driver) part VD1, 2, 3 = 15V 0.07 0.4 Pre-drive power supply consumption electric current ID VD4 = 15V Fig.4 2 5 mA Input ON voltage VIH Output ON 0.8 V Input OFF voltage VIL Output OFF 3.0 V Protection part Excessive temperature TSD The substrate surface 100 120 °C Overcurrent protection electric current ISD PW = 100 μs Fig.5 46 58 A Pre-drive low voltage protection UVLO 10 12 V Fault terminal input electric current IOSD VFault = 0.1V 0.5 mA Fault clearness delay time FLTCLR After each protection operation ending 18 80 ms Board Temperature Mounting resistance Rt Resistance between the Fault and VSS terminals 90 110 k Ω tON 0.8 μs Switching time tOFF IO = 15A, Inductive load Fig.6 1.0 μs Electric current output signal level ISO IO = 15A 0.141 V In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage. |
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