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STK621-061-E Datasheet(PDF) 2 Page - Sanyo Semicon Device

No. de pieza STK621-061-E
Descripción Electrónicos  3-phase Inverter Motor Drive Inverter Hybrid IC
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

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STK621-061-E
No.A1032-2/8
Specifications
Absolute Maximum Ratings at Tc = 25
°C
Parameter
Symbol
Conditions
Ratings
unit
Supply voltage
VCC
+ -
−, surge < 500V
*1
450
V
Collector-emitter voltage
VCE
+ - U (V, W) or U (V, W) -
600
V
Output current
IO
+,
−, U, V, W terminal current
±30
A
Output peak current
Iop
+,
−, U, V, W terminal current PW = 100μs
±45
A
Pre-driver supply voltage
VD1, 2, 3, 4
VB1 - U, VB2 - V, VB3 - W, VDD - VSS
*2
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3 terminal
0 to 7
V
FAULT terminal voltage
VFAULT
FAULT terminal
20
V
Maximum loss
Pd
Per 1 channel
49
W
Junction temperature
Tj
IGBT, FRD junction temperature
150
°C
Storage temperature
Tstg
-40 to +125
°C
Operating temperature
TC
H-IC case temperature
-20 to +100
°C
Tightening torque
A screw part at use M4 type screw
*3
1.17
N•m
Withstand voltage
Vis
50Hz sine wave AC 1 minute
*4
2000
VRMS
In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage.
*1 Surge voltage developed by the switching operation due to the wiring inductance between the + and –terminals.
*2 VD1 = between VB1-U, VD2 = VB2-V, VD3 = VB3-W, VB4 = VDD-VSS, terminal voltage.
*3 Flatness of the heat-sink should be lower than 0.25mm.
*4 The test condition is AC 2500V, 1 second.
Electrical Characteristics at Tc=25
°C, VD=15V
Ratings
Parameter
Symbol
Conditions
Test
Circuit
min
typ
max
unit
Power output part
Collector-to-emitter cut-off current
ICE
VCE = 600V
Fig.1
0.5
mA
Boot-strap diode reverse current
IR (BD)
VR (BD) = 600V
Fig.1
0.5
mA
Upper side
1.8
V
Collector-to-emitter saturation voltage
VCE (SAT)
IO = 15A
Lower side
Fig.2
2.0
V
Upper side
1.7
V
Diode forward voltage
VF
IO = -15A
Lower side
Fig.3
1.9
V
θj-c (T)
IGBT
2.1
°C/W
Junction-to-substrate thermal resistance
θj-c (D)
FWD
2.5
°C/W
Control (Pre-driver) part
VD1, 2, 3 = 15V
0.07
0.4
Pre-drive power supply consumption
electric current
ID
VD4 = 15V
Fig.4
2
5
mA
Input ON voltage
VIH
Output ON
0.8
V
Input OFF voltage
VIL
Output OFF
3.0
V
Protection part
Excessive temperature
TSD
The substrate surface
100
120
°C
Overcurrent protection electric current
ISD
PW = 100
μs
Fig.5
46
58
A
Pre-drive low voltage protection
UVLO
10
12
V
Fault terminal input electric current
IOSD
VFault = 0.1V
0.5
mA
Fault clearness delay time
FLTCLR
After each protection
operation ending
18
80
ms
Board Temperature Mounting resistance
Rt
Resistance between the Fault
and VSS terminals
90
110
k
Ω
tON
0.8
μs
Switching time
tOFF
IO = 15A, Inductive load
Fig.6
1.0
μs
Electric current output signal level
ISO
IO = 15A
0.141
V
In the case without the instruction, the voltage standard is - terminal = VSS terminal voltage.


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