MJ13333 datasheet(3/8 Pages) MOTOROLA | 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS

Nombre de pieza

Descripción

MJ13333

20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS ( 8 Page)

MOTOROLA

3 page

MJ13333

Motorola Bipolar Power Transistor Device Data

0.2

IC, COLLECTOR CURRENT (AMP)

1.2

0.8

IC, COLLECTOR CURRENT (AMP)

0.4

100

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

5.0

0.2

0.5

1.0

2.0

Figure 2. Collector Saturation Region

0.01

IB, BASE CURRENT (AMP)

1.6

0.8

0.4

TJ = 150°C

Figure 3. Collector–Emitter Saturation Region

1.0

5.0

0.5

Figure 4. Base–Emitter Voltage

Figure 5. Collector Cutoff Region

2.0

1.2

– 0.4

Figure 6. Capacitance

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1

– 0.2

+ 0.2

+ 0.4

+ 0.6

3000

0.1

VR, REVERSE VOLTAGE (VOLTS)

1000

100

1000

100

FORWARD

VCE = 250 V

10 A

1 A

REVERSE

101

102

103

104

Cib

VCE = 5 V

°C

5.0

0.02

0.5

1.0

2.0

5.0

0.1

0.2

0.05

500

0.5 1.0

5.0

200

700

2000

1.6

IC/IB = 5

2.0

1.2

0.8

0.4

1.6

150

°C

1.0

5.0

0.5

2.0

500

5 A

150

°C

2.0

IC/IB = 5

°C

150

°C

125

°C

100

°C

Cob

1 2 3 4 5 6 7 8

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