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TC1101V Datasheet(PDF) 1 Page - Transcom, Inc.

No. de pieza TC1101V
Descripción Electrónicos  Low Noise and Medium Power GaAs FETs
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Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1101V Datasheet(HTML) 1 Page - Transcom, Inc.

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TC1101V
REV6_20070502
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/2
Low Noise and Medium Power GaAs FETs
FEATURES
Via holes for source grounding
PHOTO ENLARGEMENT
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BVDGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
DESCRIPTION
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It
can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including
a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality.
All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °°°°C)
Symbol
Conditions
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
11
13
dB
P1dB
Output Power at 1dB Gain Compression Point, f = 12GHz, VDS = 6 V, IDS = 25 mA
17.5
18.5
dBm
GL
Linear Power Gain, f = 12GHz, VDS = 6 V, IDS = 25 mA
14
15
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
48
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
55
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
-1.0*
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
9
12
Volts
Rth
Thermal Resistance
180
°C/W
Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups:
(1)TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V
(3)TC1101VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) TYPICAL NOISE PARAMETERS (TA=25 °°°°C)
VDS = 2 V, IDS = 10 mA
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
160 µA
Pin
RF Input Power, CW
18 dBm
PT
Continuous Dissipation
250 mW
TCH
Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
Γopt
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
2
0.34
21.2
0.97
14
0.63
4
0.36
19.3
0.83
30
0.54
6
0.38
17.5
0.68
50
0.42
8
0.42
15.9
0.51
75
0.30
10
0.48
14.4
0.38
106
0.18
12
0.54
13.2
0.28
145
0.14
14
0.63
12.7
0.25
-168
0.12
16
0.76
12.5
0.31
-111
0.17
18
0.94
12.2
0.49
-45
0.36


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