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TC1102 Datasheet(PDF) 1 Page - Transcom, Inc.

No. de pieza TC1102
Descripción Electrónicos  Super Low Noise GaAs FETs
Download  4 Pages
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Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1102 Datasheet(HTML) 1 Page - Transcom, Inc.

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TC1102
REV5_20070502
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4
Super Low Noise GaAs FETs
FEATURES
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
High Associated Gain: Ga = 13 dB Typical at 12 GHz
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
DESCRIPTION
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has
very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and
suitable for low noise application including a wide range of commercial and military applications. All
devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °°°°C)
Symbol
Conditions
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 2 V, IDS = 10 mA,, f
= 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 2 V, IDS = 10 mA,
f
= 12GHz
11
13
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
48
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
55
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
-1.0*
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
5
8
Volts
Rth
Thermal Resistance
225
°C/W
Note: * For the tight control of the pinch-off voltage . TC1102’s are divided into 3 groups:
(1) TC1102P0710 : Vp = -0.7V to -1.0V (2) TC1102P0811 : Vp = -0.8V to -1.1V (3) TC1102P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) TYPICAL NOISE PARAMETERS (TA=25 °°°°C)
VDS = 2 V, IDS = 10 mA
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
5 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
160 µA
Pin
RF Input Power, CW
17 dBm
PT
Continuous Dissipation
250 mW
TCH
Channel Temperature
175 °C
TSTG
Storage Temperature
- 65 °C to +175 °C
Γopt
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
2
0.30
19.0
0.98
15
0.40
4
0.32
17.4
0.84
30
0.35
6
0.34
15.7
0.68
50
0.26
8
0.37
14.3
0.51
76
0.19
10
0.42
12.9
0.38
107
0.12
12
0.47
11.9
0.28
146
0.08
14
0.56
11.4
0.25
193
0.07
16
0.70
11.2
0.32
250
0.11
18
0.87
10.9
0.49
317
0.23


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