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TC1102 Datasheet(PDF) 1 Page - Transcom, Inc. |
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TC1102 Datasheet(HTML) 1 Page - Transcom, Inc. |
1 / 4 page TC1102 REV5_20070502 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 Super Low Noise GaAs FETs FEATURES Low Noise Figure: NF = 0.5 dB Typical at 12 GHz PHOTO ENLARGEMENT High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability Tight Vp ranges control High RF input power handling capability 100 % DC Tested DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz 0.5 0.7 dB Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz 11 13 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 48 mA gm Transconductance at VDS = 2 V, VGS = 0 V 55 mS VP Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA -1.0* Volts BVDGO Drain-Gate Breakdown Voltage at IDGO =0.08 mA 5 8 Volts Rth Thermal Resistance 225 °C/W Note: * For the tight control of the pinch-off voltage . TC1102’s are divided into 3 groups: (1) TC1102P0710 : Vp = -0.7V to -1.0V (2) TC1102P0811 : Vp = -0.8V to -1.1V (3) TC1102P0912 : Vp = -0.9V to -1.2V In addition, the customers may specify their requirements. ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) TYPICAL NOISE PARAMETERS (TA=25 °°°°C) VDS = 2 V, IDS = 10 mA Symbol Parameter Rating VDS Drain-Source Voltage 5 V VGS Gate-Source Voltage -3.0 V IDS Drain Current IDSS IGS Gate Current 160 µA Pin RF Input Power, CW 17 dBm PT Continuous Dissipation 250 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C Γopt Frequency (GHz) NFopt (dB) GA (dB) MAG ANG Rn/50 2 0.30 19.0 0.98 15 0.40 4 0.32 17.4 0.84 30 0.35 6 0.34 15.7 0.68 50 0.26 8 0.37 14.3 0.51 76 0.19 10 0.42 12.9 0.38 107 0.12 12 0.47 11.9 0.28 146 0.08 14 0.56 11.4 0.25 193 0.07 16 0.70 11.2 0.32 250 0.11 18 0.87 10.9 0.49 317 0.23 |
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