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TC1201V Datasheet(PDF) 1 Page - Transcom, Inc.

No. de pieza TC1201V
Descripción Electrónicos  Low Noise and Medium Power GaAs FETs
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Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1201V Datasheet(HTML) 1 Page - Transcom, Inc.

  TC1201V Datasheet HTML 1Page - Transcom, Inc. TC1201V Datasheet HTML 2Page - Transcom, Inc.  
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TC1201V
REV5_20070502
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1 / 2
Low Noise and Medium Power GaAs FETs
FEATURES
! Via holes for source grounding
PHOTO ENLARGEMENT
! Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
! High Associated Gain: Ga = 13 dB Typical at 12 GHz
! High Dynamic Range: 1 dB Compression Power P
-1 = 21.5 dBm at 6 V,
40 mA and 12 GHz
! Breakdown Voltage: BV
DGO
≥ 9 V
! Lg = 0.25
µm, Wg = 300 µm
! All-Gold Metallization for High Reliability
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
DESCRIPTION
The TC1201V is the same as TC1201 expect via holes in the source reducing the grounding inductance. The
device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and suitable
for low noise and medium power amplifier application including a wide range of commercial and military
application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either
thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
Conditions
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz
11
13
dB
P1dB
Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA
20.5
21.5
dBm
GL
Linear Power Gain, f
= 12GHz VDS = 6 V, IDS = 40 mA
11
12
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
90
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
100
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.6 mA
-1.0*
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO =0.15 mA
9
12
Volts
Rth
Thermal Resistance
96
°C/W
Note: * For the tight control of the pinch-off voltage . TC1201V’s are divided into 3 groups:
(1)TC1201VP0710 : Vp = -0.7V to -1.0V (2)TC1201VP0811 : Vp = -0.8V to -1.1V
(3)TC1201VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.


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