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TC1201V Datasheet(PDF) 2 Page - Transcom, Inc.

No. de pieza TC1201V
Descripción Electrónicos  Low Noise and Medium Power GaAs FETs
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Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1201V Datasheet(HTML) 2 Page - Transcom, Inc.

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TC1201V
REV5_20070502
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2 / 2
ABSOLUTE MAXIMUM RATINGS (TA=25
°°°°C) TYPICAL NOISE PARAMETERS (TA=25 °°°°C)
VDS = 4 V, IDS = 25 mA
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
300
µA
Pin
RF Input Power, CW
21 dBm
PT
Continuous Dissipation
400 mW
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
Γopt
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
2
0.36
20.2
0.96
14
0.59
4
0.38
18.5
0.83
31
0.50
6
0.40
16.7
0.67
51
0.39
8
0.43
15.2
0.51
76
0.28
10
0.50
13.8
0.37
108
0.17
12
0.56
12.7
0.28
147
0.13
14
0.66
12.1
0.25
-166
0.11
16
0.83
12.0
0.31
-108
0.15
18
1.03
12.2
0.49
-41
0.34
CHIP DIMENSIONS
Units: Micrometers
Chip Thickness: 55
Gate Pad: 55 x 50
Drain Pad: 55 x 50
Source Pad: 55 x 65
CHIP HANDLING
DIE ATTACHMENT : Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature : 290
°C ±5°C ; Handling Tool :
Tweezers ; Time : less than 1min .
WIRE BONDING : The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. State Temperature : 220
°C to 250°C ; Bond Tip Temperature : 150°C ; Bond Force :
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS : The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge(ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must less than 300V.
D
S
S
G
D
S
G
430 ! 12
250!12


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