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TC1202 Datasheet(PDF) 1 Page - Transcom, Inc.

No. de pieza TC1202
Descripción Electrónicos  Super Low Noise GaAs FETs
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Fabricante Electrónico  TRANSCOM [Transcom, Inc.]
Página de inicio  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1202 Datasheet(HTML) 1 Page - Transcom, Inc.

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TC1202
REV5_20070502
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1 / 4
Super Low Noise GaAs FETs
FEATURES
!
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
PHOTO ENLARGEMENT
!
High Associated Gain: Ga = 12 dB Typical at 12 GHz
!
Lg = 0.25
µm, Wg = 300 µm
!
All-Gold Metallization for High Reliability
!
Tight Vp ranges control
!
High RF input power handling capability
!
100 % DC Tested
DESCRIPTION
The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low
noise figure and high associated gain. The device can be used in circuits up to 30 GHz and suitable for low noise
application including a wide range of commercial and military applications. All devices are 100% DC tested to
assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire
bonding.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
Conditions
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 4 V, IDS = 25 mA, f
= 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 4 V, IDS = 25 mA, f
= 12GHz
11
12
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
90
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
100
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.6 mA
-1.0
Volts
BVDGO
Drain-Gate Breakdown Voltage at IDGO =0.15 mA
5
8
Volts
Rth
Thermal Resistance
120
°C/W
Note: * For the tight control of the pinch-off voltage . TC1202’s are divided into 3 groups:
(1) TC1202P0710 : Vp = -0.7V to -1.0V (2) TC1202P0811 : Vp = -0.8V to -1.1V (3) TC1202P0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.


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