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AD5204BN50 Datasheet(PDF) 3 Page - Analog Devices |
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AD5204BN50 Datasheet(HTML) 3 Page - Analog Devices |
3 / 11 page –3– AD5204/AD5206 REV. 0 5Resistor Terminals A, B, W, have no limitations on polarity with respect to each other. 6Guaranteed by design and not subject to production test. 7Measured at the Ax terminals. All Ax terminals are open-circuited in shutdown mode. 8P DISS is calculated from (IDD × V DD). CMOS logic level inputs result in minimum power dissipation. 9All dynamic characteristics use V DD = +5 V. 10See timing diagrams for location of measured values. All input control voltages are specified with t R = tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are measured using both V DD = +3 V or +5 V. 11Propagation delay depends on value of V DD, RL and CL. See Operation section. Specifications subject to change without notice. ABSOLUTE MAXIMUM RATINGS* (TA = +25°C, unless otherwise noted) VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, –7 V VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7 V VA, VB, VW to GND . . . . . . . . . . . . . . . . . . . . . . . . . . VSS, VDD Ax–Bx, Ax–Wx, Bx–Wx . . . . . . . . . . . . . . . . . . . . . . ±20 mA Digital Input and Output Voltage to GND . . . . . . . 0 V, +7 V Operating Temperature Range . . . . . . . . . . . –40 °C to +85°C Maximum Junction Temperature (TJ MAX) . . . . . . . . +150 °C Storage Temperature . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300 °C CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD5204/AD5206 features proprietary ESD protection circuitry, permanent dam- age may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Package Power Dissipation . . . . . . . . . . . . . . (TJ max–TA)/ θ JA Thermal Resistance θ JA P-DIP (N-24) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 °C/W SOIC (SOL-24) . . . . . . . . . . . . . . . . . . . . . . . . . . . 70 °C/W TSSOP-24 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 °C/W *Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. WARNING! ESD SENSITIVE DEVICE |
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