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CSD16408Q5C Datasheet(PDF) 3 Page - Texas Instruments

No. de pieza CSD16408Q5C
Descripción Electrónicos  The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD16408Q5C Datasheet(HTML) 3 Page - Texas Instruments

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background image
GATE
Source
DRAIN
M0137-02
GATE
Source
DRAIN
M0137-01
tP − PulseDuration − s
0.001
0.01
10
1k
0.001
1
10
0.1
0.1
100
1
G012
SinglePulse
0.01
0.02
0.05
0.1
0.3
0.5
DutyCycle=t1/t2
TypicalR
=100 C/W(minCu)
T =P xZ
xR
q
q
q
JA
J
JA
JA
o
P
t1
t2
0.01
CSD16408Q5C
www.ti.com
SLPS263B – DECEMBER 2009 – REVISED SEPTEMBER 2010
Max RqJA = 51ºC/W
Max RqJA = 125ºC/W
when mounted on
when mounted on
1 inch2 (6.45 cm2) of
minimum pad area of
2-oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
break
break
break
break
TYPICAL MOSFET CHARACTERISTICS
TA = 25°C unless otherwise stated
Figure 1. Transient Thermal Impedance
Copyright © 2009–2010, Texas Instruments Incorporated
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