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CSD18504Q5A Datasheet(PDF) 3 Page - Texas Instruments |
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CSD18504Q5A Datasheet(HTML) 3 Page - Texas Instruments |
3 / 12 page 0 20 40 60 80 100 0 0.2 0.4 0.6 0.8 1 1.2 VDS - Drain-to-Source Voltage (V) VGS =10V VGS =6.5V VGS =4.5V G001 0 20 40 60 80 100 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) TC = 125°C TC = 25°C TC = −55°C VDS = 5V G001 GATE Source DRAIN M0137-01 GATE Source DRAIN M0137-02 CSD18504Q5A www.ti.com SLPS366B – JUNE 2012 – REVISED NOVEMBER 2012 Max RθJA = 50°C/W Max RθJA = 125°C/W when mounted on when mounted on a 1 inch2 (6.45 cm2) of 2- minimum pad area of oz. (0.071-mm thick) 2-oz. (0.071-mm thick) Cu. Cu. TYPICAL MOSFET CHARACTERISTICS (TA = 25°C unless otherwise stated) Figure 2. Transient Thermal Impedance TEXT ADDED FOR SPACING TEXT ADDED FOR SPACING Figure 3. Saturation Characteristics Figure 4. Transfer Characteristics Copyright © 2012, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: CSD18504Q5A |
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Descripción similar - CSD18504Q5A_12 |
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