Nombre de pieza
         Descripción
MJD122

 SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT ( 8 Page)


MOTOROLA
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MJD122 MJD127
3
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
0.1
0.7
3000
0.5
1
20,000
1000
2
3
5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3
0.5
1
7
3
5
2
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
3
2.5
1
0.5
0.2
3
0.1
0.7
0.3
1
5
10
20 30
200
300
0.3
7
10
0.7
0.5
7
2
10
PNP MJD127
NPN MJD122
IC, COLLECTOR CURRENT (AMP)
500
0.2
5000
2000
10,000
VCE = 4 V
TJ = 150°C
7000
0.1
0.7
25
°C
– 55
°C
3000
0.5
1
20,000
700
1000
2
3
5
3
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
0.3
0.5
1
7
3
5
4 A
IC = 2 A
2
TJ = 25°C
1
IC, COLLECTOR CURRENT (AMP)
2
1.5
3
2.5
1
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4 V
VCE(sat) @ IC/IB = 250
0.2
3
0.1
0.7
0.3
1
5
10
20
30
Figure 2. DC Current Gain
Figure 3. Collector Saturation Region
Figure 4. “On” Voltages
200
300
0.3
7
10
0.7
0.5
7
2
10
6 A
VCE = 4 V
TJ = 150°C
25
°C
– 55
°C
TJ = 25°C
4 A
IC = 2 A
6 A
TJ = 25°C
VBE @ VCE = 4 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TYPICAL ELECTRICAL CHARACTERISTICS
1  2  3  4  5  6  7  8 



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