MJE15028 datasheet(3/6 Pages) MOTOROLA | 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120-150 VOLTS 50 WATTS

3 page

MJE15028 MJE15030 MJE15029 MJE15031

Motorola Bipolar Power Transistor Device Data

2.0

Figure 3. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02

120

BONDING WIRE LIMITED

THERMALLY LIMITED

SECOND BREAKDOWN

LIMITED @ TC = 25°C

100

µs

5.0

150

1.0

0.1

5 ms

MJE15028

MJE15029

MJE15030

MJE15031

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

The data of Figures 3 and 4 is based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

_C. TJ(pk) may be calculated from the data in Figure 2.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

8.0

Figure 4. Reverse–Bias Switching

Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

120

140

5 V

VBE(off) = 9 V

100

110

150

3.0

130

2.0

1.0

VR, REVERSE VOLTAGE (VOLTS)

150

500

1000

Figure 5. Capacitances

200

100

7.0

5.0

1.5

3.0

Figure 6. Small–Signal Current Gain

f, FREQUENCY (MHz)

1.0

3.0

100

2.0

7.0

5.0

0.5

5.0

0.7

NPN

Figure 7. Current Gain–Bandwidth Product

IC, COLLECTOR CURRENT (AMP)

0.5

2.0

100

1.0

0.1

5.0

0.2

IC/IB = 10

TC = 25°C

3 V

1.5 V

PNP

(NPN)

(PNP)

VCE = 10 V

IC = 0.5 A

TC = 25°C

Cib (NPN)

Cob (PNP)

100

0 V

Cib (PNP)

Cob (NPN)

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