Nombre de pieza
         Descripción
MJE200

 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS ( 6 Page)


MOTOROLA
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MJE200 MJE210
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
0.01
0.02
0.05
1.0
2.0
5.0
10
20
50
100
200
0.1
0.5
0.2
1.0
0.2
0.1
0.05
θJC(t) = r(t) θJC
θJC = 8.34°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0 (SINGLE PULSE)
Figure 4. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.1
0.02
0.01
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
30
7.0
0.7
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
Figure 5. Active Region Safe Operating Area
500
µs
dc
5.0
20
10
7.0
5.0
3.0
2.0
1.0
100
µs
TJ = 150°C
0.2
0.5
1.0
2.0
3.0
0.3
1.0 ms
5.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150 _C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
IC, COLLECTOR CURRENT (AMPS)
10
5K
3K
2K
1K
500
300
200
100
50
Figure 6. Turn–Off Time
30
20
0.01
0.03 0.05
0.5
0.2
0.02
0.1
0.3
10
5
2
1
3
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
VR, REVERSE VOLTAGE (VOLTS)
20
40
100
200
50
Figure 7. Capacitance
70
20
10
6.0
4.0
2.0
1.0
0.4
0.6
TJ = 25°C
Cib
Cob
MJE200 (NPN)
MJE210 (PNP)
30
MJE200
MJE210
1  2  3  4  5  6 



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