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| MJE243 |
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MOTOROLA |
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MJE243 MJE253 3 Motorola Bipolar Power Transistor Device Data t, TIME (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 200 0.1 0.5 0.2 1.0 0.2 0.1 0.05 θJC(t) = r(t) θJC θJC = 8.34°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.2 0 (SINGLE PULSE) Figure 4. Thermal Response 0.5 D = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 0.1 30 0.01 0.05 Figure 5. Active Region Safe Operating Area 500 µs dc 5.0 20 10 7.0 5.0 3.0 2.0 1.0 100 µs TJ = 150°C 0.2 0.5 1.0 2.0 0.02 1.0 ms 100 70 50 5.0 ms BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE243/MJE253 There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150 _C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10K IC, COLLECTOR CURRENT (AMPS) 10 5K 3K 2K 1K 500 300 200 100 50 Figure 6. Turn–Off Time 30 20 0.01 0.03 0.05 0.5 0.2 0.02 0.1 0.3 10 5 2 1 3 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts tf VR, REVERSE VOLTAGE (VOLTS) 10 100 100 200 50 Figure 7. Capacitance 70 50 20 10 7.0 5.0 3.0 1.0 2.0 TJ = 25°C Cib Cob MJE243 (NPN) MJE253 (PNP) 30 NPN MJE243 PNP MJE253 20 70 30 |
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