MJH11017 datasheet(3/6 Pages) MOTOROLA | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

3 page

MJH11017 MJH11019 MJH11021 MJH11018 MJH11020 MJH11022

Motorola Bipolar Power Transistor Device Data

Figure 3. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.7

0.2

0.1

0.05

0.02

0.05

1.0

2.0

5.0

100

200

500

θJC(t) = r(t) RθJC

θJC = 0.83°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

θJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.1

0.5

0.2

1000

0.5

0.3

0.07

0.03

0.01

0.03

3.0

300

0.3

0.2

0.1

0.05

0.02

0.01

WIRE BOND LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

0.5 ms

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

1.0 ms

5.0 ms

0.1 ms

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0

3.0

0.5

0.2

5.0

1.0

100

TC = 25°C SINGLE PULSE

5.0

250

150

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150 _C. TJ(pk) may be calculated from the data in

Figure 3. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

140

180

100

260

220

Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)

L = 200

µH

IC/IB1 ≥ 50

TC = 100°C

VBE(off) = 0 – 5.0 V

RBE = 47 Ω

DUTY CYCLE = 10%

MJH11017, MJH11018

MJH11019, MJH11020

MJH11021, MJH11022

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 5 gives RBSOA characteristics.

Número de Pieza	Descripción de Componentes	Html View	Fabricante
MJ3281A	15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS	1 2 3 4 5 More	Motorola, Inc
MJL21193	16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ15018	4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS	1 2 3 4	Motorola, Inc
MJ2500	10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS	1 2 3 4	Motorola, Inc
MJ10020	60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ11012	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS	1 2 3 4	Motorola, Inc
MJ11017	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS	1 2 3 4 5 More	Motorola, Inc
MJ15001	15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS	1 2 3 4	Motorola, Inc
MJ10015	50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS	1 2 3 4 5 More	Motorola, Inc
MJH6282	DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 80 100 VOLTS 160 WATTS	1 2 3 4 5 More	Motorola, Inc

Número de Pieza relacionado

Enlace URL

Patrocinador de Alldatasheet