CSD18534KCS datasheet(4/8 Pages) TI

No. de pieza	CSD18534KCS

Descripción Electrónicos	60-V, N-Channel NexFET Power MOSFETs

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Fabricante Electrónico	TI [Texas Instruments]

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4 / 8 page

0.4

0.6

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1.2

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1.6

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2.4

−75

−25

25

75

125

175

TC - Case Temperature (ºC)

VGS = 4.5V

VGS = 10V

ID =40A

G001

0.0001

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VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

0.8

1

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1.6

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2.2

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2.6

−75

−25

25

75

125

175

TC - Case Temperature (ºC)

ID = 250uA

G001

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28

32

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VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 40A

TC = 125ºC Id = 40A

G001

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Qg - Gate Charge (nC)

ID = 40A

VDS = 30V

G001

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VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD18534KCS

SLPS383 – SEPTEMBER 2012

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

Figure 6. Threshold Voltage vs. Temperature

Figure 7. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 8. Normalized On-State Resistance vs. Temperature

Figure 9. Typical Diode Forward Voltage

4

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