TIP31BG datasheet(5/6 Pages) ONSEMI

No. de pieza	TIP31BG

Descripción Electrónicos	Complementary Silicon Plastic Power Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

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TJ, JUNCTION TEMPERATURE (°C)

103

−0.4

101

100

10−2

102

10−1

10−3

107

105

104

102

106

103

IB, BASE CURRENT (mA)

IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMP)

300

500

0.05 0.07

0.3

3.0

0.03

100

70

50

30

10

7.0

0.1

VBE, BASE−EMITTER VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VCE = 2.0 V

5.0

0.7 1.0

0.5

1.6

2.0

5.0

20

1000

1.0

0.8

0.4

10

0

100 200

500

50

25°C

TJ = 150°C

−55 °C

1.2

1.4

0.003

IC, COLLECTOR CURRENT (AMPS)

1.0

0.8

0.4

1.2

0.6

0.2

0

0.005 0.01 0.02 0.03 0.05 0.1

+2.5

IC = 0.3 A

20

60

80

100

120

160

140

40

TJ = 25°C

1.0 A

3.0 A

0.2 0.3 0.5

1.0

2.0 3.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

+2.0

+1.5

+1.0

+0.5

0

−0.5

−1.0

−1.5

−2.0

−2.5

0.003 0.005 0.01 0.02

0.05 0.1

0.2 0.3 0.5

1.0

2.0 3.0

*APPLIES FOR IC/IB ≤ hFE/2

TJ = −65°C TO +150°C

*qVC FOR VCE(sat)

qVB FOR VBE

Figure 11. Temperature Coefficients

−0.3 −0.2 −0.1

0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

Figure 12. Collector Cut−Off Region

Figure 13. Effects of Base−Emitter Resistance

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE

FORWARD

ICES

VCE = 30 V

IC = 10 x ICES

IC ≈ ICES

IC = 2 x ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

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