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DMG4511SK4-7 Datasheet(PDF) 4 Page - Diodes Incorporated

No. de pieza DMG4511SK4-7
Descripción Electrónicos  This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMG4511SK4-7 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMG4511SK4
Document number: DS32042 Rev. 4 - 2
4 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
N-CHANNEL, Q1
0
0.5
1
1.5
2
Fig. 1 Typical Output Characteristic
V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
V
= 3.2V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V
= 8.0V
GS
V
= 2.8V
GS
01
2
3
4
5
Fig. 2 Typical Transfer Characteristic
V
, GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 5V
DS
0
5
10
15
20
25
30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0
0.01
0.02
0.03
0.04
0.05
V
= 4.5V
GS
V
= 8.0V
GS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
= 4.5V
I = 5A
GS
D
V
= 10V
I = 10A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
= 10V
I = 10A
GS
D
V
= 4.5V
I = 5A
GS
D


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