SI7178DP-T1-GE3 datasheet(3/13 Pages) VISHAY

No. de pieza	SI7178DP-T1-GE3

Descripción Electrónicos	N-Channel 100-V (D-S) MOSFET

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Document Number: 69951

S-80678-Rev. A, 31-Mar-08

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Vishay Siliconix

Si7178DP

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

12

24

36

48

60

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS =10thru 7 V

VGS =6 V

VGS =5 V

0.010

0.011

0.012

0.013

0.014

0.015

0

12243648

60

ID - Drain Current (A)

VGS =10 V

VGS = 8V

0

2

4

6

8

10

09

18

27

36

45

54

ID =10A

Qg - Total Gate Charge (nC)

VDS =25 V

VDS =75 V

VDS =50 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

4

5

02

4

6

8

10

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC = 25 °C

TC = - 55 °C

Crss

0

800

1600

2400

3200

4000

020

40

60

80100

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V

ID =10A

VGS = 8V

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SI7178DP-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix

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