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SI4162DY-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix

No. de pieza SI4162DY-T1-GE3
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET
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SI4162DY-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix

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Vishay Siliconix
Si4162DY
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
APPLICATIONS
DC/DC
- High Side
- VRM
- POL
- Server
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
Qg (Typ.)
30
0.0079 at VGS = 10 V
19.3a
8.8 nC
0.010 at VGS = 4.5 V
17.1a
Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
SD
SD
SD
GD
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G
D
S
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
19.3a
A
TC = 70 °C
15.4
TA = 25 °C
13.6b, c
TA = 70 °C
10.9b, c
Pulsed Drain Current
IDM
70
Avalanche Current
L = 0.1 mH
IAS
31
Avalanche Energy
EAS
48
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
IS
4.2a
A
TA = 25 °C
2.1b, c
Maximum Power Dissipation
TC = 25 °C
PD
5
W
TC = 70 °C
3.2
TA = 25 °C
2.5b, c
TA = 70 °C
1.6b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, d
t
≤ 10 s
RthJA
38
50
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
20
25
RoHS
COMPLIANT


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