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SI4162DY-T1-GE3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI4162DY-T1-GE3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 10 page Vishay Siliconix Si4162DY Document Number: 68967 S-82621-Rev. A, 03-Nov-08 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested APPLICATIONS • DC/DC - High Side - VRM - POL - Server PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 30 0.0079 at VGS = 10 V 19.3a 8.8 nC 0.010 at VGS = 4.5 V 17.1a Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free) SO-8 SD SD SD GD 5 6 7 8 Top View 2 3 4 1 N-Channel MOSFET G D S Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 19.3a A TC = 70 °C 15.4 TA = 25 °C 13.6b, c TA = 70 °C 10.9b, c Pulsed Drain Current IDM 70 Avalanche Current L = 0.1 mH IAS 31 Avalanche Energy EAS 48 mJ Continuous Source-Drain Diode Current TC = 25 °C IS 4.2a A TA = 25 °C 2.1b, c Maximum Power Dissipation TC = 25 °C PD 5 W TC = 70 °C 3.2 TA = 25 °C 2.5b, c TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 20 25 RoHS COMPLIANT |
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