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ACE9926B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE9926B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE9926B Dual N-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 2.5V to 12V. The two devices may be used individually, in parallel or to form a bidirectional blocking switch. Features V DS (V)=20V I D=6A (VGS=4.5V) R DS(ON) <30m Ω (V GS=4.5V) R DS(ON) <40 mΩ (V GS=2.5V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) * AC TA=25 OC ID 6 A TA=70 OC 5 Drain Current (Pulse) * B IDM 24 A Power Dissipation TA=25 OC PD 2 W TA=70 OC 1.3 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOP-8 |
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