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BAS21SW Datasheet(PDF) 6 Page - NXP Semiconductors |
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BAS21SW Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 6 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. f = 1 MHz; Tamb =25 °C FR4 PCB, standard footprint (1) Single diode loaded. (2) Double diode loaded. Fig 4. Diode capacitance as a function of reverse voltage; typical values Fig 5. Forward current as a function of ambient temperature; derating curve mbg447 04 8 6 2 VR (V) 1.0 0.8 0.2 0.6 0.4 Cd (pF) Tamb (°C) 0 200 150 50 100 006aab214 100 200 300 IF (mA) 0 (2) (1) (1) IR =1mA Fig 6. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 % VR input signal V = VR + IF × RS RS = 50 Ω IF D.U.T. Ri = 50 Ω SAMPLING OSCILLOSCOPE mga881 |
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