AM3406N datasheet(1/2 Pages) ANALOGPOWER

No. de pieza	AM3406N

Descripción Electrónicos	N-Channel 30V (D-S) MOSFET

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Fabricante Electrónico	ANALOGPOWER [Analog Power]

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AM3406N

Analog Power

April, 2004 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM3406_A

These miniature surface mount MOSFETs

utilize High Cell Density process. Low r

DS(on)

assures minimal power loss and conserves

energy, making this device ideal for use in

power management circuitry. Typical

applications are power switch, power

management in portable and battery-powered

products such as computers, printers, PCMCIA

cards, cellular and cordless telephones.

VDS (V)

rDS(on) (Ω)ID (A)

0.032 @ VGS = 10 V

6.3

0.044 @ VGS = 4.5V

5.4

PRODUCT SUMMARY

30

N-Channel 30V (D-S) MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Low Gate Charge

•

Fast Switch

•

Miniature TSOP-6 Surface Mount Package

Saves Board Space

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

34

5

6

Symbol Maximum Units

VDS

30

VGS

±20

TA=25

oC6.3

TA=70

oC5.1

IDM

±30

IS

1.7

A

TA=25

oC2.0

TA=70

oC1.3

TJ, Tstg -55 to 150

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Symbol Maximum Units

t <= 5 sec

62.5

Steady-State

110

THERMAL RESISTANCE RATINGS

Parameter

oC/W

Maximum Junction-to-Ambient

a

RTHJA

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