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STB23NM50N Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STB23NM50N
Descripción Electrónicos  N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB23NM50N Datasheet(HTML) 3 Page - STMicroelectronics

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STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
Electrical ratings
Doc ID 16913 Rev 4
3/21
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, D²PAK TO-247 TO-220FP
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
17
17 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
11
11 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
68
68 (1)
A
PTOT
Total dissipation at TC = 25 °C
125
30
W
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
dv/dt (3)
3.
ISD ≤ 17 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK
TO-247
TO-220
TO-220FP
Rthj-case
Thermal resistance junction-case
max
14.17
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb
minimum footprint
30
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
62.5
50
62.5
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
6A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
254
mJ


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