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FDC5612 Datasheet(PDF) 2 Page - Fairchild Semiconductor

No. de pieza FDC5612
Descripción Electrónicos  60V N-Channel PowerTrenchTM MOSFET
Download  8 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC5612 Datasheet(HTML) 2 Page - Fairchild Semiconductor

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FDC5612 Rev. C
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250
µA60
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C58
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250
µA2
2.2
4
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C-5.5
mV/
°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.3 A
VGS = 10 V, ID = 4.3 A, TJ = 125
°C
VGS = 6 V, ID = 4 A
0.042
0.072
0.048
0.055
0.094
0.064
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
10
A
gFS
Forward Transconductance
VDS = 10 V, ID = 4.3 A
14
S
Dynamic Characteristics
Ciss
Input Capacitance
650
pF
Coss
Output Capacitance
80
pF
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
35
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
11
20
ns
tr
Turn-On Rise Time
8
18
ns
td(off)
Turn-Off Delay Time
19
35
ns
tf
Turn-Off Fall Time
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
615
ns
Qg
Total Gate Charge
12.5
18
nC
Qgs
Gate-Source Charge
2.4
nC
Qgd
Gate-Drain Charge
VDS = 30 V, ID = 4.3 A,
VGS = 10 V
2.6
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
1.3
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
0.75
1.2
V
Notes:
1. R
q
JA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
q
JC
is guaranteed by design while R
q
CA
is determined by the user's board design.
2. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
a) 78°C/W when mounted on a 1.0 in2 pad of 2 oz. copper.
b) 156°C/W when mounted on a minimum pad.


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