Document Number: 63683

S12-2183-Rev. A, 10-Sep-12

www.vishay.com

3

Vishay Siliconix

Si8466EDB

This document is subject to change without notice.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

1.5

A

Pulse Diode Forward Current

20

Body Diode Voltage

0.7

1.2

V

Body Diode Reverse Recovery Time

30

60

ns

Body Diode Reverse Recovery Charge

715

nC

Reverse Recovery Fall Time

15

ns

Reverse Recovery Rise Time

15

Output Characteristics

0

4

8

12

16

20

0

3

6

9

12

15

V

T

On-Resistance vs. Drain Current and Gate Voltage

10

-1

10

-2

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

10

-9

0

3

6

9

12

15

V

T

T