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FDS4070N3 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FDS4070N3 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDS4070N3 Rev B1 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 32 nS Qrr Diode Reverse Recovery Charge IF = 15.3 A, diF/dt = 100 A/µs 39 nC Notes: 1. R θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0 |
Número de pieza similar - FDS4070N3 |
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Descripción similar - FDS4070N3 |
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