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FDS5670 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDS5670 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDS5670 Rev. B Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 58 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 22.4 4 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 6.8 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TJ=125 °C VGS = 6 V, ID = 9 A 0.012 0.019 0.014 0.014 0.027 0.017 Ω ID(on) On-State Drain Current VGS = 10 V, VDS = 5 V 25 A gFS Forward Transconductance VDS = 5 V, ID = 10 A 39 S Dynamic Characteristics Ciss Input Capacitance 2900 pF Coss Output Capacitance 685 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V f = 1.0 MHz 180 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 16 29 ns tr Turn-On Rise Time 10 20 ns td(off) Turn-Off Delay Time 50 80 ns tf Turn-Off Fall Time VDD = 30 V, ID = 1 A VGS = 10 V, RGEN = 6 Ω 23 42 ns Qg Total Gate Charge 49 70 nC Qgs Gate-Source Charge 9 nC Qgd Gate-Drain Charge VDS = 20 V, ID = 10 A VGS = 10 V, 10.4 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 2.1 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 1.2 V Notes: 1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 50° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. c) 125° C/W when mounted on a minimum pad. |
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Descripción similar - FDS5670 |
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